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Technological equipment

TECHNOLOGICAL EQUIPMENT 

 

  • Installation for the organic single crystals growth by the method of gas transport.

Installation consists of an external copper tube, two heaters, gas system and quartz tube for the crystals growth. Original organic material sublimes and moves by laminar flow of argon in the colder region of the tube. There the crystals grow on the walls of the quartz tube. Sublimation temperature - up to 350C, the flow of argon - to 150sm3/min.

  • Complex installations for the production of MIS structures on the surface of any substance, including organic semiconductors and superconductors.

MIS structures allow the effect of the electric field on the surface to 108 V / m.
  • Installation for polymer dielectric films.
Installation intended to cover the samples poly(p-xylylene) polymer films. The parylene polymers are deposited from the vapor phase by a special process. A solid, granular raw material, called dimer, is heated under vacuum at the temperature about 120C and vaporized into a dimeric gas. The gas is then pyrolized at the temperature about 700C and then in the room temperature deposition chamber, the monomer gas deposits on all surfaces as a thin, transparent polymer film.The thickness of the coating 0.5-5mkm (standard 1 mm), the dielectric constant of 2.65, Volume resistivity - better than 1014 ohm-cm, the dielectric strength - better than 100V / m, elongation at break - not less than 20%. The maximum size of coated sample - 2*2 cm2. These coatings provide excellent corrosion resistance, barrier properties and exhibit superior dielectric protection.

  • Installation for coating of metal films on the surface of the various materials.

Installation is optimized for the deposition of the metal on the volatile matter (for example, organic semiconductors). Since metal evaporates from the hot cathode, in order to prevent overheating of the volatile materials samples, evaporator is placed far away from the sample, and the sample is located on a massive copper block that is cooled by water. There is a possibility to install Peltier element between the sample and the copper block for cooling the sample below 0°C). Control of the film thickness during the deposition process is carried out by a quartz thickness gauge Sigma AQM-160.

• Temperature of the sample -30 - +20 º C.

• Evaporation materials: Al, In, Ag, Au.
  • Installation for the manufacture of contact masks for metal deposition by electric spark cutting.
Cutting the mask of a metal foil is made by a tungsten needle. The needle and the foil connected to the output of the HF generator and immersed into distilled water. At the point of contact there is a spark, burning through the foil. Cutting thickness is limited by the thickness of the tungsten wire (50 micrometers). Standard size foil 2cm, masks - 8mm. It is possible to make bigger masks.

  • Installation for quality control of optical films based on an interference microscope LUMAM.

Installations for the synthesis of organic compounds crystals  by electrochemical methods (on-site of IPCP).

Installing for the pulsed laser deposition of HTSC heterostructures with high-speed filtering module.

The unit is designed for the deposition of epitaxial HTS films and heterostructures.

Installation features:

• Deposition in classical axial geometry.

• Elimination of microdroplets and particulates from the laser plasma flow using velocity filtering.

• The ability to change the target in situ and layer deposition of various materials films.

• Maximum sample size - 15x15 mm

General view of the vacuum chamber for a pulsed laser deposition

Technological Complex "Oxide"for thin-film multi-element HTS structures manufacturing (on the base of IRE)

consisting of
 

  • High vacuum sputter installation Z-400 ("Leybold AG", Germany) for the deposition of thin films of metals (such as Nb, Al, Pb) and insulators using techniques of cathode sputtering, electron-beam sputtering and termoevaporation;

    Installation Z-400, is modified for the tasks of epitaxial growth of the oxide films during high temperature deposition:

    (i) thin films of complex oxides (YBa2Cu3Ox)

    (ii) Composite dielectric oxide films (such as cerium oxide).

    Installed heater provide a temperature up to 850°C in an oxygen atmosphere.
"Clean room" for photolithography with centrifuge, oven, chemical tables, etc. Installation for Alignment and Exposure MJB-3HP ("Karl Zuss", Germany), provides a resolution of 1 micron lithography and allows to create (on subsequent etching) complex multi-layered microstructure.
  • Complex for substrates processing, including installation for unwelding of oxide chips, substrates cutting system and programmable furnace for annealing samples in oxygen at a temperature of 1200°C.

Installation of ultrasonic welding of thin (38 microns) wires of Al or Au (Kulicke & Soffa, USA, Model 4129)

  • The ion-beam etching. Ion beam etching is used along with the chemical etching and etching in HF plasma (available at the installation Z-400). Various ways of etching needed for layer forming in multilayer heterostructures.

    Installation provides precision argon supply (MKS Instruments) and is equipped with turbo molecular pump TMP 1000C with the NT100 / 1500 controller "Leybold Vacuum", Germany.

Vacuum chamber with an ion gun Ion Tech, USA.
Thermostated room for the growth of crystals of low-dimensional (quasi) organic superconductors (on site of IPCP)
Method of growth - electro crystallization in constant current mode regime (from 0.1 up to 10 µA).